丝印：R25；Package：SC-59；NPN Silicon RF Transistor

FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain

文件：1.33099 Mbytes 页数：5 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：R25；Package：SOT23-3L；NPN Transistors

Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

文件：485.28 Kbytes 页数：4 Pages

YFWDIODE

佑风微

丝印：R25；Package：SOT23；NPN Transistors

Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

文件：1.21418 Mbytes 页数：4 Pages

EVVOSEMI

翊欧

丝印：R25；Package：SOT-323；NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va

文件：591.82 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：R25；Package：SOT-323；NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va

文件：591.82 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：R25；Package：SOT-323；NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va

文件：591.82 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：R25；Package：SOT-23；NPN Epitaxial Silicon Transistor

Description Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design. Features • 100 mA Output Current Capability • Built-in Bias Resistor (R1 = 4.7 kΩ, R2 = 10 kΩ) Application • Switching, Interface, and

文件：240.71 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：R25；Package：SC70(DCK)；REF33xx 3.9-μA, SC70-3, SOT-23-3, and UQFN-8, 30-ppm/°C Drift Voltage Reference

1 Features 1• Microsize Packages: SC70-3, SOT-23-3, UQFN-8 • Low Supply Current: 3.9 μA (typ) • Extremely Low Dropout Voltage: 110 mV (typ) • High Output Current: ±5 mA • Low Temperature Drift: 30 ppm/°C (max) • High Initial Accuracy: ±0.15% (max) • 0.1-Hz to 10-Hz Noise: 35 μVPP (REF33

文件：1.27003 Mbytes 页数：39 Pages

TI

德州仪器

丝印：R25；Package：SC70(DCK)；REF33xx 3.9-μA, SC70-3, SOT-23-3, and UQFN-8, 30-ppm/°C Drift Voltage Reference

1 Features 1• Microsize Packages: SC70-3, SOT-23-3, UQFN-8 • Low Supply Current: 3.9 μA (typ) • Extremely Low Dropout Voltage: 110 mV (typ) • High Output Current: ±5 mA • Low Temperature Drift: 30 ppm/°C (max) • High Initial Accuracy: ±0.15% (max) • 0.1-Hz to 10-Hz Noise: 35 μVPP (REF33

文件：1.27003 Mbytes 页数：39 Pages

TI

德州仪器

丝印：R25；Package：SC70(DCK)；REF33xx 3.9-μA, SC70-3, SOT-23-3, and UQFN-8, 30-ppm/°C Drift Voltage Reference

1 Features 1• Microsize Packages: SC70-3, SOT-23-3, UQFN-8 • Low Supply Current: 3.9 μA (typ) • Extremely Low Dropout Voltage: 110 mV (typ) • High Output Current: ±5 mA • Low Temperature Drift: 30 ppm/°C (max) • High Initial Accuracy: ±0.15% (max) • 0.1-Hz to 10-Hz Noise: 35 μVPP (REF33

文件：1.27003 Mbytes 页数：39 Pages

TI

德州仪器