丝印：R0；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：324 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：R0；Package：TO-236AB；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：323.9 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：R0；Package：X2-DFN1006-3；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (

文件：335.5 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：R0；Package：6LdμTDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mA Dual LDO with Low Noise, High PSRR, and Low IQ ISL9016 is a high performance dual LDO capable of providing up to 150mA current on each channel. It features a low standby current and very high PSRR and is stable with output capacitance of 1µF to 4.7µF with an ESR of up to 200mΩ. Features •

文件：558.84 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：R0；Package：SOT-23；N-Channel Enhancement Mode Mosfet

Features High dense cell design for extremely low RDS(on). Exceptional on-resistance and maximum DC current capability. Load/Power Switching. Interfacing Switching

文件：400.34 Kbytes 页数：5 Pages

RECTRON

丽正国际

丝印：R0；Package：SOT-23；N-Channel Enhancement Mode MOSFET

Feature Advanced Trench Process Technology Low Threshold Voltage Fast Switching Speed Halogen-Free & Lead-Free Applications Load Switch for Portable Devices Voltage controlled small signal switch

文件：4.91642 Mbytes 页数：7 Pages

UNSEMI

优恩半导体

丝印：R0；Package：SOT-23-3；High-Precision Voltage Detector with Ultra-Low Quiescent Current

文件：350.1 Kbytes 页数：6 Pages

FITIPOWERFitipower Integrated Technology Inc.

天鈺科技天鈺科技股份有限公司

丝印：R0；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

文件：283.48 Kbytes 页数：4 Pages

FS

丝印：R0；Package：SOT-23；N- Enhancement Mode Field Effect Transistor

文件：4.42347 Mbytes 页数：8 Pages

PJSEMI

平晶半导体

丝印：R07；WE-HCMD SMT High Current Flat Wire Inductor

General Information: Ambient Temperature (referring to IRP) -40 °C up to +85 °C Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

文件：675.47 Kbytes 页数：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团