首页>PTVA127002EV-V1>规格书详情
PTVA127002EV-V1中文资料High Power RF LDMOS FET 700 W; 50 V; 1200 - 1400 MHz数据手册MACOM规格书
| 厂商型号 |
PTVA127002EV-V1 |
| 参数属性 | PTVA127002EV-V1 封装/外壳为H-36275-4；包装为卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带；类别为分立半导体产品的晶体管-FETMOSFET-射频；产品描述：IC AMP RF LDMOS H-36275-4 |
| 功能描述 | High Power RF LDMOS FET 700 W; 50 V; 1200 - 1400 MHz |
| 封装外壳 | H-36275-4 |
| 制造商 | MACOM Tyco Electronics |
| 数据手册 | |
| 更新时间 | 2025-9-25 10:31:00 |
| 人工找货 | PTVA127002EV-V1价格和库存，欢迎联系客服免费人工找货 |
PTVA127002EV-V1规格书详情
描述 Description
The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.
特性 Features
·Broadband input and output matching
·High gain and efficiency
·Integrated ESD protection
·Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
·Low thermal resistance
·Excellent ruggedness
·Pb-free and RoHS compliant
应用 Application
·Radar
·Power Amplifiers in the 1200 to 1400 MHz frequency band
技术参数
- 制造商编号
：PTVA127002EV-V1
- 生产厂家
：MACOM
- Min Frequency(MHz)
：1200
- Max Frequency(MHz)
：1400
- Peak Output Power(W)
：700
- Gain(dB)
：16.0
- Efficiency(%)
：56
- Operating Voltage(V)
：50
- Form
：Packaged Discrete Transistor
- Package Category
：Bolt Down
- Technology
：LDMOS
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
22+ |
9000 |
原厂渠道,现货配单 |
询价 | |||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
FOQ |
24+ |
9624 |
郑重承诺只做原装进口现货 |
询价 | |||
Infineon |
22+ |
NA |
493 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
Cree/Wolfspeed |
100 |
询价 | |||||
FOQ |
24+ |
200 |
询价 | ||||
Infineon Technologies |
21+ |
- |
20000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
PENTAMEDIA |
2022+ |
247 |
全新原装 货期两周 |
询价 | |||
FOQPIEZOT |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
FOQ |
2023+ |
SMD |
1172 |
一级代理优势现货,全新正品直营店 |
询价 |
