High Power RF LDMOS FET 700 W; 50 V; 1200 - 1400 MHz

The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and ·Broadband input and output matching\n·High gain and efficiency\n·Integrated ESD protection\n·Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)\n·Low thermal resistance\n·Excellent ruggedness\n·Pb-free and RoHS compliant;

MACOM

Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz

Description The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excell

文件：691.91 Kbytes 页数：10 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz

Description The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excell

文件：691.91 Kbytes 页数：10 Pages

WOLFSPEED

Package：H-36275-4；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS H-36275-4

WOLFSPEED