PTVA120252MTV1中文资料General Purpose Transistors (700 MHz to 2700 MHz)数据手册Infineon规格书

描述 Description

High Power RF LDMOS FET, 25 W, 48 V, 500 – 1400 MHz

特性 Features

·Unmatched
· Target CW performance 960 MHz, 48 V, combined outputs     - Output power at P 1dB = 25 W    - Gain = 19.8 dB    - Efficiency = 64%
·Capable of handling 10:1VSWR @ 48 V, 20 W CW output power
·Integrated ESD protection
·Human Body Model class 1C (per ANSI/ESDA/JEDC JS-001)
·Low thermal resistance
·Pb-free and RoHS compliant