PTVA082407NFV1中文资料Cellular (700 MHz to 1000 MHz)数据手册Infineon规格书

描述 Description

High Power LDMOS FET, 240 W, 48 V, 746 - 821 MHz

特性 Features

·Broadband internal input matching
·Typical CW performance, 755 MHz, 48 V   - Output power at P 1dB = 225 W   - Output power at P 3dB = 250 W   - Gain = 20.5 dB   - Efficiency = 43%
·Capable of handling 10:1 VSWR @ 48 V, 80 W CW output power
·Integrated ESD protection
·Human Body Model class 2 (per ANSI/ESDA/JEDEC JS-001)
·Low thermal resistance
·Pb-free and RoHS compliant