General Purpose Relay

A Miniature Power Relay ■ Equipped with arc barrier. ■ Dielectric strength: 2,000 V. ■ Built-in diode models added to the LY Series. ■ Single-pole and double-pole models are applicable to operating coils with ratings of 100/110 VAC, 110/120 VAC, 200/220 VAC, 220/240 VAC, or 100/110 VDC

文件：300.71 Kbytes 页数：13 Pages

OMRON

欧姆龙

LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ

Description The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output power

文件：64.14 Kbytes 页数：4 Pages

INFINEON

英飞凌

High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz

Description The PTF080101M is an unmatched 10-watt GOLDMOS® FETintended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint. Features • Typical EDGE performance - Average out

文件：258.49 Kbytes 页数：8 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz

Description The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output power

文件：172.75 Kbytes 页数：9 Pages

INFINEON

英飞凌

LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ

Description The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output power

文件：64.14 Kbytes 页数：4 Pages

INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - A

文件：158.52 Kbytes 页数：9 Pages

INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - A

文件：158.52 Kbytes 页数：9 Pages

INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output

文件：293.73 Kbytes 页数：6 Pages

INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output

文件：293.73 Kbytes 页数：6 Pages

INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output

文件：293.73 Kbytes 页数：6 Pages

INFINEON

英飞凌