Description

The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

Features

• Broadband internal matching

• Typical EDGE performance

- Average output power = 4.0 W

- Gain = 19 dB

- Efficiency = 31

• Typical CW performance

- Output power at P–1dB = 13 W

- Gain = 18 dB

- Efficiency = 55

• Integrated ESD protection: Human Body Model, Class 1 (minimum)

• Excellent thermal stability

• Low HCI drift

• Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power

PTF080101S属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。英飞凌科技股份公司制造生产的PTF080101S晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。