LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - A

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INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - A

文件：158.52 Kbytes 页数：9 Pages

INFINEON

英飞凌

LDMOSRF Power Field Effect Transistor 45 W, 869–960 MHz

Description\nThe PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA  applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. • Broadband internal matching\n• Typical EDGE performance\n- Average output power = 22.5 W\n- Gain = 18 dB\n- Efficiency = 40%\n• Typical CW performance\n- Output power at P–1dB = 60 W\n- Gain = 17 dB\n- Efficiency = 60%\n• Integrated ESD protection: Human Body Model, Class 1 (minimum)\n• Ex;

Infineon

英飞凌

OMRON/欧姆龙

上传：深圳市英创达电子半导体有限公司

EUT-6

TI/德州仪器

上传：深圳市坤融电子科技有限公司