General-purpose Relays and Power Relays Sockets

文件：878.49 Kbytes 页数：27 Pages

OMRON

欧姆龙

A Wide Variety of Square and Round Sockets in Front-mounting and Back-mounting Models

文件：10.34428 Mbytes 页数：27 Pages

OMRON

欧姆龙

A Wide Variety of Square and Round Sockets in Front-mounting and Back-mounting Models

文件：10.34428 Mbytes 页数：27 Pages

OMRON

欧姆龙

Power-switching Compact General-purpose Relays

文件：9.30035 Mbytes 页数：22 Pages

OMRON

欧姆龙

General Purpose Relay ??LY

文件：354.93 Kbytes 页数：15 Pages

OMRON

欧姆龙

General-purpose Relays and Power Relays Sockets

文件：878.49 Kbytes 页数：27 Pages

OMRON

欧姆龙

LDMOS RF Power Field Effect Transistor 10 W, 860–960 MHz

Description\nThe PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. • Broadband internal matching\n• Typical EDGE performance\n  - Average output power = 4.0 W\n  - Gain = 19 dB\n  - Efficiency = 31%\n• Typical CW performance\n  - Output power at P–1dB = 13 W\n  - Gain = 18 dB\n- Efficiency = 55%\n• Integrated ESD protection: Human Body Model, Class 1 (minim;

Infineon

英飞凌

LDMOSRF Power Field Effect Transistor 45 W, 869–960 MHz

Description\nThe PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA  applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. • Broadband internal matching\n• Typical EDGE performance\n- Average output power = 22.5 W\n- Gain = 18 dB\n- Efficiency = 40%\n• Typical CW performance\n- Output power at P–1dB = 60 W\n- Gain = 17 dB\n- Efficiency = 60%\n• Integrated ESD protection: Human Body Model, Class 1 (minimum)\n• Ex;

Infineon

英飞凌

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Infineon

英飞凌

Package：H-32259-2；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 960MHZ H-32259-2

INFINEON

英飞凌