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PTF080601

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output

文件:293.73 Kbytes 页数:6 Pages

INFINEON

英飞凌

PTF080601

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Infineon

英飞凌

PTF080601A

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output

文件:293.73 Kbytes 页数:6 Pages

INFINEON

英飞凌

PTF080601E

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output

文件:293.73 Kbytes 页数:6 Pages

INFINEON

英飞凌

PTF080601F

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output

文件:293.73 Kbytes 页数:6 Pages

INFINEON

英飞凌

PTF080601A

LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz

Description\nThe PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. • Broadband internal matching\n• Typical CW performance\n• Integrated ESD protection: Human Body Model, Class 1 (minimum)\n• Low HCI drift\n• Capable of handling 10:1 VSWR @ 28V, 60 W (CW) output power;

Infineon

英飞凌

详细参数

  • 型号:

    PTF080601

  • 制造商:

    INFINEON

  • 制造商全称:

    Infineon Technologies AG

  • 功能描述:

    LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

供应商型号品牌批号封装库存备注价格
INFINEON
23+
高频管
280
专营高频管模块,全新原装!
询价
INFINEON
22+
高频管
350
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
INFINEON
23+
CAN
8000
只做原装现货
询价
INFINEON
23+
CAN
7000
询价
24+
3000
公司存货
询价
ERICSSON/爱立信
24+
332
现货供应
询价
INFINEON/英飞凌
23+
TO-59
8510
原装正品代理渠道价格优势
询价
INFINEON/英飞凌
23+
TO-59
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
INFINEON
2406+
3886
优势代理渠道,原装现货,可全系列订货
询价
Infineon
20+
高频管
29516
高频管全新原装主营-可开原型号增税票
询价
更多PTF080601供应商 更新时间2026-1-21 18:05:00