PTF080101S中文资料LDMOS RF Power Field Effect Transistor 10 W, 860–960 MHz数据手册Infineon规格书

描述 Description

The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

特性 Features

• Broadband internal matching
• Typical EDGE performance
  - Average output power = 4.0 W
  - Gain = 19 dB
  - Efficiency = 31%
• Typical CW performance
  - Output power at P–1dB = 13 W
  - Gain = 18 dB
- Efficiency = 55%
• Integrated ESD protection: Human Body Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power 

简介

PTF080101S属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的PTF080101S晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。