N-channel, 100 V, 1.04 mOhm, MOSFET with enhanced SOA in CCPAK1212 package

General description N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R0-100ASE delivers very low RDSon and enhanced safe operating area performance in a high-reliability c

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丝印：XP1F0S10A；Package：SOT8000A；NextPower 100 V, 0.99 mOhm, N-channel MOSFET in CCPAK1212 package

1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 460 Amps ID(max) continuous current rating • Low Q

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丝印：XP1F0S10C；Package：CCPAK1212i；NextPower 100 V, 1.04 mOhm, N-channel MOSFET in CCPAK1212i package

1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 460 Amps ID(max) continuous current rating • Low Q

文件：374.51 Kbytes 页数：13 Pages

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丝印：1C030L；Package：SOT669；N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology

1. General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High reliability Power SO8 package, qualified to 175°C • Opti

文件：753.4 Kbytes 页数：14 Pages

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N-channel 30 V 1.15 mOHM logic level MOSFET in LFPAK

General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits ■ High reliability Power SO8 package, qualified to 175°C ■ Optimised fo

文件：248.31 Kbytes 页数：15 Pages

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NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

Key applications } Synchronous buck regulators } DC-DC conversion } Voltage regulator modules (VRM) } Power OR-ing

文件：1.78504 Mbytes 页数：8 Pages

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丝印：1E0L30Y；Package：SOT669；N-channel 30 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

1. General description N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linearmode applications. 2. Features and benefits • Fully optimized Safe Operating Area (SOA) for

文件：321.57 Kbytes 页数：13 Pages

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N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology

1. General description 325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an

文件：327.25 Kbytes 页数：13 Pages

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N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology

1. General description 325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an

文件：327.25 Kbytes 页数：13 Pages

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丝印：ID04UL；Package：SOT1023A；N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower- S3 Schottky-Plus technology

1. General description SOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high

文件：269.59 Kbytes 页数：13 Pages

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