N-channel 30 V, 1.0 m廓 logic level MOSFET in LFPAK56 using NextPowerS3 Technology

文件：243.02 Kbytes 页数：13 Pages

PHI

飞利浦

Discrete and MOSFET components, analog & logic ICs

文件：11.62178 Mbytes 页数：234 Pages

NEXPERIA

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Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes 页数：234 Pages

NEXPERIA

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丝印：1D040L；Package：LFPAK56；N-channel 40 V, 1.1 m廓, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

文件：269.17 Kbytes 页数：14 Pages

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N-channel 40 V 1.1 m廓 logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

文件：296.72 Kbytes 页数：13 Pages

PHI

飞利浦

N-channel 40 V, 1.1 m廓, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

文件：269.17 Kbytes 页数：14 Pages

NEXPERIA

安世

Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes 页数：234 Pages

NEXPERIA

安世

NextPower 100 V, 1.04 mOhm, N-channel MOSFET in CCPAK1212i package

NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications.

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N-channel 25 V, 1.0 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without pr • 100% Avalanche tested at I(AS) =100A\n• Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies\n• Superfast switching with soft-recovery\n• Low spiking and ringing for low EMI designs\n• Unique “SchottkyPlus” technology; Schottky-like performance with;

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N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. • High reliability Power SO8 package, qualified to 175°C\n• Optimised for 4.5V Gate drive utilising NextPower Superjunction technology\n• Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads\n• Ultra low Rdson and low parasitic inductance;

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