PSMN1R0-40SSH

N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology

1.Generaldescription 325Ampcontinuouscurrent,standardlevelgatedrive,N-channelenhancementmodeMOSFET inLFPAK88package.NextPowerS3familyusingNexperia’sunique“SchottkyPlus”technology delivershighefficiencyandlowspikingperformanceusuallyassociatedwithMOSFETswith an

PSMN1R0-40SSH

N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology; • 325 Amp continuous current capability\n• LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection\n• Copper-clip and solder die attach for low package inductance and resistance, and high ID (max) rating\n• Ideal replacement for D2PAK and 10 x 12 mm leadless package types\n• Qualified to 175 °C\n• Meets UL2595 requirements for creepage and clearance\n• Avalanche rated, 100 % tested\n• Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies\n• Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs\n• Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage\n• Narrow VGS(th) rating for easy paralleling and improved current sharing\n• Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions\n;

325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies, and also safe and reliable switching at high load-current.\n

PSMN1R0-40ULD

N-channel40V,1.1mΩ,280AlogiclevelMOSFETinSOT1023AenhancedpackageforUL2595,usingNextPower-S3Schottky-Plustechnology

1.Generaldescription SOT1023AwithimprovedcreepageandclearancetomeetUL2595requirements280Amp,logic levelgatedriveN-channelenhancementmodeMOSFETin150°CLFPAK56packageusing advancedTrenchMOSSuperjunctiontechnology.Thisproducthasbeendesignedandqualifiedfor high

PSMN1R0-40YLD

N-channel40V,1.1m廓,280AlogiclevelMOSFETinLFPAK56usingNextPower-S3Schottky-Plustechnology

PSMN1R0-40YSH

N-channel40V,1mΩ,290AstandardlevelMOSFETinLFPAK56EusingNextPower-S3Schottky-Plustechnology

1.Generaldescription 290Amp,standardlevelgatedriveN-channelenhancementmodeMOSFETin175°CLFPAK56E packageusingadvancedTrenchMOSSuperjunctiontechnology.Thisproducthasbeendesigned andqualifiedforhighperformancepowerswitchingapplications. 2.Featuresandbenefits •