PSMN1R0-40YSH

N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology

1.Generaldescription 290Amp,standardlevelgatedriveN-channelenhancementmodeMOSFETin175°CLFPAK56E packageusingadvancedTrenchMOSSuperjunctiontechnology.Thisproducthasbeendesigned andqualifiedforhighperformancepowerswitchingapplications. 2.Featuresandbenefits •

PSMN1R0-40SSH

N-channel40V,1mΩ,325Ampscontinuous,standardlevelMOSFETinLFPAK88usingNextPowerS3Technology

1.Generaldescription 325Ampcontinuouscurrent,standardlevelgatedrive,N-channelenhancementmodeMOSFET inLFPAK88package.NextPowerS3familyusingNexperia’sunique“SchottkyPlus”technology delivershighefficiencyandlowspikingperformanceusuallyassociatedwithMOSFETswith an

PSMN1R0-40ULD

N-channel40V,1.1mΩ,280AlogiclevelMOSFETinSOT1023AenhancedpackageforUL2595,usingNextPower-S3Schottky-Plustechnology

1.Generaldescription SOT1023AwithimprovedcreepageandclearancetomeetUL2595requirements280Amp,logic levelgatedriveN-channelenhancementmodeMOSFETin150°CLFPAK56packageusing advancedTrenchMOSSuperjunctiontechnology.Thisproducthasbeendesignedandqualifiedfor high

PSMN1R0-40YLD

N-channel40V,1.1m廓,280AlogiclevelMOSFETinLFPAK56usingNextPower-S3Schottky-Plustechnology