丝印：1E0L30Y；Package：SOT669；N-channel 30 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

1. General description N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linearmode applications. 2. Features and benefits • Fully optimized Safe Operating Area (SOA) for

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NEXPERIA

安世

N-channel 30 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linear-mode applications.\n • Fully optimized Safe Operating Area (SOA) for superior linear mode operation\n• LFPAK56 package for applications that demand the highest performance and reliability in a 30 mm2 footprint\n• Copper-clip for low parasitic inductance and resistance\n• High reliability LFPAK package, qualified to 175 ;

Nexperia

安世

N-channel 30 V 1.15 m廓 logic level MOSFET in LFPAK using NextPower technology

文件：307.78 Kbytes 页数：15 Pages

PHI

飞利浦

NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

文件：1.8032 Mbytes 页数：8 Pages

PHI

飞利浦