1. General description

SOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logic

level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using

advanced TrenchMOS Superjunction technology. This product has been designed and qualified for

high performance power switching applications.

2. Features and benefits

• Improved creepage and clearance – meets the requirements of UL2595

• 280 A capability

• Avalanche rated, 100 tested at IAS = 190 A

• NextPower-S3 technology delivers 'superfast switching with soft recovery'

• Low QRR, QG and QGD for high system efficiency and low EMI designs

• Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage

• Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology

• High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to

150 °C

• Exposed leads can be wave soldered, visual solder joint inspection and high quality solder

joints

• Low parasitic inductance and resistance

3. Applications

• Brushed and brushless motor control

• Battery powered appliances where enhanced creepage and clearance is required to meet

UL2595

• For non-UL2595 applications please use PSMN1R0-40YLD