N-channel 100V 12mΩ standard level MOSFET in LFPAK

1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low RDSon and low gate cha

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丝印：12FS10Y；Package：SOT669；NextPower 100 V, 11.8 mOhm N-channel MOSFET in LFPAK56 package

1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • Low QG × RDSon FOM for high efficiency switching applications •

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NextPower 100 V, 11.8 mOhm N-channel MOSFET in LFPAK56 package

1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • Low QG × RDSon FOM for high efficiency switching applications •

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NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

Key applications } Synchronous buck regulators } DC-DC conversion } Voltage regulator modules (VRM) } Power OR-ing

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丝印：12RL60H；Package：LFPAK56D；N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology enhanced for repetitive avalanche

General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package, using application specific (ASFET) repetitive avalanche silicon technology. Features and benefits • High reliability LFPAK56D package, copper-clip, solder die attach and qualified to 175 °C • Test

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丝印：M12S60；Package：SOT1210；N-channel 60 V 12 mΩ standard level MOSFET in LFPAK33

1. General description Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of motor, industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conductio

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N-channel LFPAK 60 V, 11.1 mΩ standard level MOSFET

1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low RDSon and low gate cha

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 74A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 11mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 74A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 11mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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N-channel 80 V 11 mΩ standard level MOSFET

1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction lo

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