丝印：PSC10G065D；Package：TO-220AC；650 V, 10 A high surge silicon carbide power Schottky diode

Features • None or negligible reverse recovery charge in application current range • Switching behaviour independent of temperature • High forward surge capability • Operating Tj from -55 °C to +175 °C • ECOPACK2 compliant component

文件：525.79 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：PSC10G065DY；Package：TO-220AC；Automotive 650 V, 10 A high surge silicon carbide power Schottky diode

Features • AEC-Q101 qualified and PPAP capable • None or negligible reverse recovery charge in application current range • Switching behaviour independent of temperature • High forward surge capability • Operating Tj from -55 °C to +175 °C • ECOPACK2 compliant component

文件：530.61 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：PSC10H065；Package：DPAK；650 V, 10 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Insulated package TO-220AC Ins: – Insulated voltage: 2500 VRMS – Typical package capacitance: 7 pF • Power efficient product • ECOPACK®2 comp

文件：401.37 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：PSC10H065Y；Package：DPAK；Automotive 650 V power Schottky silicon carbide diode

Features • AEC-Q101 qualified • No reverse recovery charge in application current range • Switching behavior independent of temperature • Recommended to PFC applications • PPAP capable • ECOPACK compliant component

文件：348.12 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：PSC12G065D；Package：TO-220AC；650 V, 12 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Operating Tj from -55 °C to 175 °C • ECOPACK2 compliant component

文件：552.56 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：PSC16G065D；Package：TO-220AC；650 V, 16 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Operating Tj from -55 °C to 175 °C • ECOPACK2 compliant component

文件：552.84 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：PSC2H065Y；Package：DPAK；Automotive 650 V, 2 A high surge silicon carbide power Schottky diode

Features • AEC-Q101 qualified • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • PPAP capable • ECOPACK2 compliant component • VRRM guaranteed from -40 to 175 °C • Power efficient product

文件：241.42 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：PSC2H12Y；Package：DPAKHV；Automotive 1200 V, 2 A power Schottky silicon carbide diode

Features • AEC-Q101 qualified • PPAP capable • No or negligible reverse recovery • High forward surge capability • Operating Tj from -40 °C to 175 °C • Creepage distance of 3 mm as per IEC 60664-1 • ECOPACK2 compliant component Applications • Bootstrap function of SiC MOS-FETS • Snubbe

文件：259.75 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：PSC2H12Y；Package：DPAKHV；Automotive 1200 V, 2 A power Schottky silicon carbide diode

Features • AEC-Q101 qualified • PPAP capable • No or negligible reverse recovery • High forward surge capability • Operating Tj from -40 °C to 175 °C • Creepage distance of 3 mm as per IEC 60664-1 • ECOPACK2 compliant component

文件：299.25 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：PSC30G065L2Y；Package：HU3PAK；Automotive 650 V, 30 A high surge silicon carbide power Schottky diode

Features • AEC-Q101 qualified and PPAP capable • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Operating Tj from -55 °C to 175 °C • SMD with top side cooling package (HU3PAK) • ECOPACK2 compliant com

文件：567.35 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体