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PMXB120EPE

30 V, P-channel Trench MOSFET

General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Trench MOSFET technology • Leadless ultra small and ultra t

文件:252.98 Kbytes 页数:15 Pages

恩XP

恩XP

PMXB350UPE

20 V, P-channel Trench MOSFET

General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Trench MOSFET technology • Leadless ultra small and ultra thin SMD pl

文件:241.47 Kbytes 页数:15 Pages

恩XP

恩XP

PMXB350UPE

丝印:11;Package:SOT1215;20 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small and ultra thi

文件:727.27 Kbytes 页数:15 Pages

NEXPERIA

安世

PMXB360ENEA

丝印:11;Package:SOT1215;80 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Leadless ultra small and ultra thin S

文件:252.77 Kbytes 页数:14 Pages

NEXPERIA

安世

PMXB360ENEA

80 V, N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Logic-level compatible • Leadless ultra small and ultra thin SMD plas

文件:225.84 Kbytes 页数:15 Pages

恩XP

恩XP

PMXB40UNE

丝印:10;Package:SOT1215;12 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small and thin SMD

文件:741.2 Kbytes 页数:15 Pages

NEXPERIA

安世

PMXB40UNE

12 V, N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Trench MOSFET technology • Leadless ultra small and thin SMD plastic

文件:261.779 Kbytes 页数:15 Pages

恩XP

恩XP

PMXB43UNE

20 V, N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Trench MOSFET technology • Leadless ultra small and thin SMD plastic

文件:253.26 Kbytes 页数:15 Pages

恩XP

恩XP

PMXB43UNE

丝印:11;Package:SOT1215;20 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small and thin SMD

文件:734.28 Kbytes 页数:15 Pages

NEXPERIA

安世

PMXB56EN

30 V, N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Trench MOSFET technology • Leadless ultra small and thin SMD plastic

文件:276.48 Kbytes 页数:15 Pages

恩XP

恩XP

技术参数

  • Package name:

    DFN0603-3

  • Product status:

    Production

  • Channel type:

    N

  • Nr of transistors:

    1

  • VDS [max] (V):

    20

  • VGS [max] (V):

    12

  • RDSon [max] @ VGS = 4.5 V (mΩ):

    210

  • RDSon [max] @ VGS = 2.5 V (mΩ):

    230

  • integrated gate-source ESD protection diodes:

    N

  • Tj [max] (°C):

    150

  • ID [max] (A):

    1.3

  • QGD [typ] (nC):

    0.4

  • QG(tot) [typ] @ VGS = 4.5 V (nC):

    1.5

  • Ptot [max] (W):

    0.3

  • VGSth [typ] (V):

    0.7

  • Automotive qualified:

    N

  • Ciss [typ] (pF):

    144

  • Coss [typ] (pF):

    14

  • Release date:

    2021-04-06

供应商型号品牌批号封装库存备注价格
PC
0834+
QFP
6
询价
PMX
24+
MQFP
3000
公司存货
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恩XP
17+
NA
6200
100%原装正品现货
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PHL
24+
BGA
6868
原装现货,可开13%税票
询价
ZILOG
00/01+
SMD28
77
全新原装100真实现货供应
询价
ZILOG
24+
SOP
5000
只做原装公司现货
询价
Nexperia
24+
NA
3000
进口原装正品优势供应
询价
TI
23+
SOP
12000
全新原装假一赔十
询价
ZILOG
25+
SOP28W
3629
原装优势!房间现货!欢迎来电!
询价
恩XP
24+
SMD
50
NXP一级代理商原装进口现货,假一赔十
询价
更多PMX供应商 更新时间2025-12-26 9:01:00