3.0SMC10

Marking：10；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

BA178M10CP

Marking：10；Package：178M10CP；Three-Terminal Regulator

STRUTURE:SiliconMonolithicIntergratedCircuit TYPE:Three-TerminalRegulator FEATURES:Outputcurrentupto0.5A

LZ52C10W

Marking：10；Package：1206；SURFACE MOUNT ZENER DIODE

FEATURES •Forsurfacemountedapplication •Siliconepitaxialplanardiode •Ultrasmallsurfacemountpackage •Lowleakagecurrent •2tolerancedeviceofVz •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3)

PDTA143TEF

Marking：10；Package：SC-89；PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

PDTD114ET

Marking：10；Package：TO-236AB；500 mA, 50 V NPN resistor-equipped transistors

Generaldescription NPNResistor-EquippedTransistor(RET)familyinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackage. Features ■500mAoutputcurrentcapability ■Built-inbiasresistors ■Simplifiescircuitdesign ■Reducescomponentcount ■±10resistorratiotole

PEMH10

Marking：10；Package：SOT666；NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k

1.1Generaldescription NPN/NPNResistor-EquippedTransistors(RET)inSurface-MountedDevice(SMD) plasticpackages. 1.2Featuresandbenefits 1.3Applications Lowcurrentperipheraldriver ControlofICinputs Replacesgeneral-purposetransistorsindigitalapplications Table1.Pr

PMCXB900UE

Marking：10；Package：SOT1216；20 V, complementary N/P-channel Trench MOSFET

1.Generaldescription ComplementaryN/P-channelenhancementmodeField-EffectTransistor(FET)ina leadlessultrasmallDFN1010B-6(SOT1216)Surface-MountedDevice(SMD)plastic packageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •TrenchMOSFETtechnology •Verylowthreshold

PMDXB950UPE

Marking：10；Package：SOT1216；20 V, dual P-channel Trench MOSFET

1.Generaldescription DualP-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1010B-6(SOT1216)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •TrenchMOSFETtechnology •Leadlessultrasmallandultr

PMXB120EPE

Marking：10；Package：SOT1215；30 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •TrenchMOSFETtechnology •Leadlessultrasmallandultrathi

PMXB40UNE

Marking：10；Package：SOT1215；12 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •TrenchMOSFETtechnology •LeadlessultrasmallandthinSMD