丝印：PMH；Package：DO-214AA；Automotive and High Reliability TVS Diodes

文件：1.10451 Mbytes 页数：5 Pages

YINT

音特电子

丝印：0001；Package：SOT8001；30 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET te

文件：278.8 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：0001；Package：SOT8001；20 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET te

文件：273.89 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：00010111；Package：SOT8001；30 V, N-channel Trench MOSFET

description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic

文件：273.74 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：0001；Package：SOT8001；30 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET te

文件：276.21 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：00010010；Package：DFN0606-3；30 V, N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technol

文件：272.59 Kbytes 页数：14 Pages

NEXPERIA

安世

30 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET te

文件：275.45 Kbytes 页数：14 Pages

NEXPERIA

安世

30 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET te

文件：275.45 Kbytes 页数：14 Pages

NEXPERIA

安世

30 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET te

文件：275.45 Kbytes 页数：14 Pages

NEXPERIA

安世

PMH Panel Mount Power Supply

Highlights & Features • Household appliance approvals IEC/EN 60335-1, IEC/EN 61558-1 and IEC/EN 61558-2-16 • Universal AC input voltage • Full power from -20°C to +45°C operation @ 5000m or 16400 ft. altitude • Full corrosion resistant aluminium casing • High MTBF > 700,000 hrs as per Telco

文件：1.33503 Mbytes 页数：13 Pages

DELTA

台达电子