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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
A6618	文件：552.24 Kbytes Page：9 Pages	CMOSLOWDROPOUTREGULATOR(LDO)600mAADJUSTABLE,ULTRA-LOWNOISE,ULTRA-FAST DESCRIPTION A6618 seriesisagroupofpositivevoltageoutput, lowpowerconsumption,lowdropoutvoltage regulator. A6618 canprovideoutputvalueadjustablefrom0.8V to5.0V. A6618 includeshighaccuracyvoltagereference, erroramplifier,currentlimitcircuitandoutputdriver mod	AITSEMIAiT Semiconductor Inc. 創瑞科技AiT創瑞科技	AITSEMI
AP6618GM-HF	文件：100.58 Kbytes Page：4 Pages	LowOn-resistance,FastSwitchingCharacteristic	A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司	A-POWER
AWU6618	文件：872.94 Kbytes Page：10 Pages	HELP3EDual-bandIMT&EGSMWCDMA3.4VLinearPowerAmplifierModule	ANADIGICS ANADIGICS, Inc	ANADIGICS
CGA-6618	文件：297.61 Kbytes Page：8 Pages	DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle	SIRENZA SIRENZA MICRODEVICES	SIRENZA
CGA-6618	文件：323.83 Kbytes Page：5 Pages	DUALCATVBROADBANDHIGHLINEARITYGAASHBTAMPLIFIER ProductDescription StanfordMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesl	STANFORD Stanford Microdevices	STANFORD
CGA-6618	文件：427.06 Kbytes Page：10 Pages	DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren	RFMD RF Micro Devices	RFMD
CGA-6618Z	文件：427.06 Kbytes Page：10 Pages	DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren	RFMD RF Micro Devices	RFMD
CGA-6618Z	文件：297.61 Kbytes Page：8 Pages	DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle	SIRENZA SIRENZA MICRODEVICES	SIRENZA
GSC6618	文件：275.19 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEPOWERMOSFET	GTM 勤益投資控股股份有限公司	GTM
HM6618A	文件：2.14584 Mbytes Page：7 Pages	integratedUSBType-C	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
HM6618B	文件：2.14584 Mbytes Page：7 Pages	integratedUSBType-C	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
IRF6618	文件：230.62 Kbytes Page：10 Pages	PowerMOSFET Description TheIRF6609combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge	IRF International Rectifier	IRF
IRF6618	文件：234.56 Kbytes Page：9 Pages	HEXFETPowerMOSFET Description TheIRF6618combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge	IRF International Rectifier	IRF
IRF6618PBF	文件：250.25 Kbytes Page：9 Pages	IdealforCPUCoreDC-DCConverters	IRF International Rectifier	IRF
IRF6618PBF	文件：240.91 Kbytes Page：8 Pages	DirectFET짰PowerMOSFET짰 Description TheIRF6618PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout	IRF International Rectifier	IRF
IRF6618TRPBF	文件：240.91 Kbytes Page：8 Pages	DirectFET짰PowerMOSFET짰 Description TheIRF6618PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout	IRF International Rectifier	IRF
IRF6618TRPBF	文件：250.25 Kbytes Page：9 Pages	IdealforCPUCoreDC-DCConverters	IRF International Rectifier	IRF
LMH6618	文件：2.37257 Mbytes Page：38 Pages	130MHz,1.25mARRIOOperationalAmplifiers	TI1Texas Instruments(TI) 德州仪器德州仪器 (TI)	TI1
LMH6618	文件：1.12851 Mbytes Page：26 Pages	130MHz,1.25mARail-to-RailInputandOutputOperationalAmplifierwithShutdown	NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司	NSC
LMH6618	文件：1.1904 Mbytes Page：28 Pages	PowerWise짰130MHz,1.25mARRIOOperationalAmplifiers	NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司	NSC

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型号：
PMB6618RV
制造商：
Infineon Technologies AG

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市力通伟业半导体有限公司	PMB6618RV1.3	infineon	04+	TSSOP-38	20722	特价热销现货库存100%原装正品欢迎来电订购!	询价
深圳市勤思达科技有限公司	PMB6618RV1.3	INFINEON	10+	SOP	7800	全新原装正品,现货销售	询价
深圳市昌和盛利电子有限公司	PMB6618RV2.1	INFINEON	23+	TSSOP-38P	7936		询价
深圳市恒创达实业有限公司	PMB6618RV2.1	INFINEON	17+	SSOP	6200	100%原装正品现货	询价
深圳市昌源伟业科技有限公司	PMB6618RV2.1	INFINEON	15+	TSSOP	217	全新原装正品现货	询价
深圳市佳鑫美电子科技有限公司	PMB6618RV2.1	Infineon	22+	超薄-36	2978	100%全新原装公司现货供应!随时可发货	询价
深圳市一线半导体有限公司	PMB6618RV2.1	INFINEON	03/04+	TSSOP38	3000	公司存货	询价
深圳市福安瓯科技有限公司	PMB6618RV1.3	INFINEON	22+	TSSOP38	1859	⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙	询价
深圳市卓越微芯电子有限公司	PMB6618RV2.1	infineo	2020+	TSSOP38	2800	百分百原装正品真实公司现货库存本公司只做原装可	询价
齐创科技(上海,北京,青岛)有限公司	PMB6618RV2.1	INFINEON	23+	SMD	5000	原装正品,假一罚十	询价

更多PMB6618RV供应商更新时间2024-9-24 14:10:00

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