Schottky barrier double diode

DESCRIPTION Planar Schottky barrier double diode in a SOT23 small plastic SMD package. FEATURES • Low forward voltage • Small SMD package • Low capacitance • Matched capacitance. APPLICATIONS • UHF mixer • Sampling circuits • Modulators • Phase detection.

文件：102.2 Kbytes 页数：7 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：V8；Package：SOT23；Schottky barrier double diode

FEATURES •Low forward voltage •Small SMD package •Low capacitance •Matched capacitance. APPLICATIONS •UHF mixer •Sampling circuits •Modulators •Phase detection. DESCRIPTION Planar Schottky barrier double diode in a SOT23 small plastic SMD package.

文件：261.38 Kbytes 页数：8 Pages

NEXPERIA

安世

Schottky barrier double diode

DESCRIPTION Planar Schottky barrier double diode in a SOT23 small plastic SMD package. FEATURES • Low forward voltage • Small SMD package • Low capacitance • Matched capacitance. APPLICATIONS • UHF mixer • Sampling circuits • Modulators • Phase detection.

文件：51.64 Kbytes 页数：8 Pages

PHI

飞利浦

Schottky barrier double diode

Planar Schottky barrier double diode in a SOT23 small plastic SMD package. • Low forward voltage\n• Small SMD package\n• Low capacitance\n• Matched capacitance.\n• AEC-Q101 qualified;

Nexperia

安世

Schottky barrier double diode

文件：102.2 Kbytes 页数：7 Pages

PHI

飞利浦

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 二极管 - 射频 描述：RF DIODE SCHOTTKY 4V TO236AB

Nexperia USA Inc.