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A6618

CMOS LOW DROPOUT REGULATOR (LDO) 600mA ADJUSTABLE, ULTRA-LOW NOISE, ULTRA-FAST

DESCRIPTION A6618 seriesisagroupofpositivevoltageoutput, lowpowerconsumption,lowdropoutvoltage regulator. A6618 canprovideoutputvalueadjustablefrom0.8V to5.0V. A6618 includeshighaccuracyvoltagereference, erroramplifier,currentlimitcircuitandoutputdriver mod

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

A6618E5R

CMOS LOW DROPOUT REGULATOR (LDO) 600mA ADJUSTABLE, ULTRA-LOW NOISE, ULTRA-FAST

DESCRIPTION A6618 seriesisagroupofpositivevoltageoutput, lowpowerconsumption,lowdropoutvoltage regulator. A6618 canprovideoutputvalueadjustablefrom0.8V to5.0V. A6618 includeshighaccuracyvoltagereference, erroramplifier,currentlimitcircuitandoutputdriver mod

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

A6618E5VR

CMOS LOW DROPOUT REGULATOR (LDO) 600mA ADJUSTABLE, ULTRA-LOW NOISE, ULTRA-FAST

DESCRIPTION A6618 seriesisagroupofpositivevoltageoutput, lowpowerconsumption,lowdropoutvoltage regulator. A6618 canprovideoutputvalueadjustablefrom0.8V to5.0V. A6618 includeshighaccuracyvoltagereference, erroramplifier,currentlimitcircuitandoutputdriver mod

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AP6618GM-HF

LowOn-resistance,FastSwitchingCharacteristic

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AWU6618

HELP3EDual-bandIMT&EGSMWCDMA3.4VLinearPowerAmplifierModule

ANADIGICS

ANADIGICS

CGA-6618

DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER

ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren

RFMD

RF Micro Devices

CGA-6618

DUALCATVBROADBANDHIGHLINEARITYGAASHBTAMPLIFIER

ProductDescription StanfordMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesl

STANFORDStanford Microdevices

Stanford Microdevices

CGA-6618

DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier

ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle

SIRENZASIRENZA

圆通微波上海圆通微波电子有限公司

CGA-6618Z

DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier

ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle

SIRENZASIRENZA

圆通微波上海圆通微波电子有限公司

CGA-6618Z

DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER

ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren

RFMD

RF Micro Devices

GSC6618

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTM

勤益投資控股股份有限公司

HM6618A

integratedUSBType-C

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HM6618B

integratedUSBType-C

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

IRF6618

HEXFETPowerMOSFET

Description TheIRF6618combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF6618

PowerMOSFET

Description TheIRF6609combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF6618PBF

DirectFET짰PowerMOSFET짰

Description TheIRF6618PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF6618PBF

IdealforCPUCoreDC-DCConverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF6618TRPBF

IdealforCPUCoreDC-DCConverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF6618TRPBF

DirectFET짰PowerMOSFET짰

Description TheIRF6618PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRFInternational Rectifier

英飞凌英飞凌科技公司

LMH6618

PowerWise짰130MHz,1.25mARRIOOperationalAmplifiers

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

详细参数

  • 型号:

    A6618

  • 制造商:

    Pentair Technical Products/Hoffman

  • 功能描述:

    6x6x18 3R Wire Trough

供应商型号品牌批号封装库存备注价格
ALLEGRO
02+
PLCC
23
询价
ALLEGRO
10+
PLCC-44
7800
全新原装正品,现货销售
询价
ALLEGRO
23+
PLCC44
1580
绝对现货库存
询价
ALLEGRO
22+
PLCC
3600
绝对原装!现货热卖!
询价
ALLEGRO
2022
PLCC
2058
原厂原装正品,价格超越代理
询价
ALLEGRO
22+
PLCC44P
6980
原装现货,可开13%税票
询价
ALLERGO
2339+
PLCC-44
5650
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
ALLEGRO
2020+
PLCC
1080
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ALLEGRO
2021+
PLCC44
6702
百分百原装正品
询价
ALLEGRO
22+
PLCC44
8200
原装现货库存.价格优势!!
询价
更多A6618供应商 更新时间2024-4-30 16:30:00