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型号	下载订购	功能描述	制造商上传企业	LOGO
PHP6NA60E	文件：21.42 Kbytes Page：4 Pages	PowerMOS transistors Low capacitance Avalanche energy rated 文件：21.42 Kbytes 页数：4 Pages	PHI PHI	PHI
PHP6NA60E	文件：300 bytes Page：1 Pages	PowerMOS transistors Low capacitance Avalanche energy rated	恩XP	恩XP
PHX6NA60E	文件：25.61 Kbytes Page：5 Pages	PowerMOS transistors Low capacitance Avalanche energy rated 文件：25.61 Kbytes 页数：5 Pages	PHI PHI	PHI
STP6NA60	文件：206.48 Kbytes Page：10 Pages	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( 文件：206.48 Kbytes 页数：10 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STP6NA60FI	文件：206.48 Kbytes Page：10 Pages	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( 文件：206.48 Kbytes 页数：10 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

更多PHP6NA60E供应商更新时间2026-4-18 8:01:00