TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

文件：59.48 Kbytes 页数：7 Pages

PHI

PHI

N-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested

文件：1.13521 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

TrenchMOS™ transistor Standard level FET

GENERAL DESCRIPTION\nN-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and

恩XP

30V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：227.71 Kbytes 页数：6 Pages

PANJIT

強茂

N-Channel Logic Level E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：871.1 Kbytes 页数：8 Pages

SAMHOP

三合微科

N-Channel 30-V (D-S) MOSFET

文件：960.21 Kbytes 页数：8 Pages

VBSEMI

微碧半导体