N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP55N03LTA in a SOT78 (TO-220AB) PHB55N03LTA in a SOT404 (D2-PAK) PHD55N03LTA in a SOT428 (D-PAK). Features ■ Low on-state resistance ■ Fast switching.

文件：296.3 Kbytes 页数：14 Pages

PHI

飞利浦

MOSFET N-CH 25V 55A TO220AB

恩XP

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

文件：57.28 Kbytes 页数：8 Pages

PHI

飞利浦

30V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@16A

文件：425.93 Kbytes 页数：8 Pages

PANJIT

強茂

N-Channel Logic Level E nhancement Mode Field E ffect Transistor

FEATURES ● Super high dense cell design for extremely low RDS (ON). ● High power and current handling capability. ● TO-220 & T O-263 package.

文件：417.17 Kbytes 页数：5 Pages

Samhop

三合微科