RFP15N06L

15A,50Vand60V,0.140Ohm,LogicLevelN-ChannelPowerMOSFETs

15A,50Vand60V,0.140Ohm,LogicLevelN-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitc

STD15N06

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.075Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION ■THROU

STD15N06L

N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.075Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZ

STP15N06L

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.115Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■LOGICLEVELCOMPATIBLEINPUT ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION AP

STP15N06LFI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.115Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■LOGICLEVELCOMPATIBLEINPUT ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION AP

SUD15N06

N-Channel60-V(D-S),175CMOSFET,LogicLevel

SW15N06V

N-channelEnhancedmodeSOP-8MOSFET

TF15N06

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheTF15N06TO-252usesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. GeneralFeatures ●HighdensitycelldesignforultralowRdson ●Fullycharacterizedavalanchevoltageandcurrent

TSP15N06A

60VN-ChannelDTMOS