TrenchMOS logic level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP71NQ03LT in SOT78 (TO-220AB) PHB71NQ03LT in SOT404 (D2-PAK) PHD71NQ03LT in SOT428 (D-PAK). Features ■ Logic level compatible ■ Low gate cha

文件：265.02 Kbytes 页数：14 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：344.51 Kbytes 页数：2 Pages

ISC

无锡固电

TrenchMOS™ logic level FET

Description\nN-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.Product availability:\n   PHP71NQ03LT in SOT78 (TO-220AB)\n   PHB71NQ03LT in SOT404 (D2-PAK)\n   PHD71NQ03LT in SOT428 (D-PAK).\n   ■ Logic level compatible\n■ Low gate chargeApplications\n■ DC to DC converters\n■ Switched mode power supplies;

恩XP

TrenchMOS logic level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP71NQ03LT in SOT78 (TO-220AB) PHB71NQ03LT in SOT404 (D2-PAK) PHD71NQ03LT in SOT428 (D-PAK). Features ■ Logic level compatible ■ Low gate cha

文件：265.02 Kbytes 页数：14 Pages

PHI

飞利浦

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Simp

文件：775.19 Kbytes 页数：13 Pages

NEXPERIA

安世