Radar Pulsed Power Transistor 150W, 2.7-2.9 GHz, 100關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：108.4 Kbytes 页数：3 Pages

MA-COM

Radar Pulsed Power Transistor 25W, 2.7-2.9 GHz, 100關s Pulse, 10 Duty

Radar Pulsed Power Transistor 25W, 2.7-2.9 GHz, 100µs Pulse, 10 Duty Features ● NPN silicon microwave power transistors ● Common base configuration ● Broadband Class C operation ● High efficiency inter-digitized geometry ● Diffused emitter ballasting resistors ● Gold metallization system

文件：106.5 Kbytes 页数：3 Pages

MA-COM

RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100ms PULSE, 10 DUTY

Radar Pulsed Power Transistor 25W, 2.7-2.9 GHz, 100µs Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization sy

文件：99.82 Kbytes 页数：2 Pages

MACOM

Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：111.35 Kbytes 页数：3 Pages

MA-COM

Radar Pulsed Power Transistor, 65W, loops Pulse, 10 Duty 2.7 - 2.9 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic P

文件：158 Kbytes 页数：2 Pages

MACOM

Radar Pulsed Power Transistor, 8.5W, 100us Pulse, 10 Duty 2.7 - 2.9 GHz

Features • NPM Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic MtxaKeramic Pac

文件：158.93 Kbytes 页数：2 Pages

MACOM

Radar Pulsed Power Transistor 8.5W, 2.7-2.9 GHz, 100關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：108.1 Kbytes 页数：3 Pages

MA-COM

Radar Pulsed Power Transistor 8.5W, 2.7-2.9 GHz, 100關s Pulse, 10 Duty

Features • NPM Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic MtxaKeramic Pac

文件：108.1 Kbytes 页数：3 Pages

MACOM

Radar Pulsed Power Transistor 20W, 2.7-3.1 GHz, 100關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：106.55 Kbytes 页数：3 Pages

MA-COM

Radar Pulsed Power Transistor, 2OW, loops Pulse, 10 Duty 2.7 - 3.1 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigicated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic‘Metal/Ceramic P

文件：148.59 Kbytes 页数：2 Pages

MACOM