N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features 1.3 Applications 1.4 Quick reference data n Logic level threshold n Lead-free package n Optimized for use in DC-to-DC converters n Ver

文件：219.43 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel 25 V 2.8 mΩ logic level MOSFET in LFPAK

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOSTM technology 1.2 Features and benefits  Low thermal resistance  Low threshold voltage  Optimized for use in DC-to-DC converters  Very low switching and cond

文件：576 Kbytes 页数：16 Pages

NEXPERIA

安世

Fast Recovery Diode

FRD 270A Avg 200 Volts

文件：396.85 Kbytes 页数：2 Pages

KSS

京瓷

FRD MODULE 270A/200V/trr:150nsec

FEATURES * Isolated Base * Ultra Fast Recovery * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * High Frequency Rectification

文件：30.47 Kbytes 页数：2 Pages

NIEC

FRD MODULE 270A/600V/trr:170nsec

FRD MODULE 270A/600V/trr:170nsec FEATURES * Isolated Base * Ultra Fast Recovery * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * High Frequency Rectification

文件：30.27 Kbytes 页数：2 Pages

NIEC

Radar Pulsed Power Transistor, 110W, 100us Pulse, 10 Duty 2.7 - 2.9 GHz

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：157.48 Kbytes 页数：2 Pages

MACOM

Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100關s Pulse, 10 Duty

Features  NPN silicon microwave power transistors  Common base configuration  Broadband Class C operation  High efficiency inter-digitized geometry  Diffused emitter ballasting resistors  Gold metallization system  Internal input and output impedance matching  Hermetic metal/cerami

文件：108.8 Kbytes 页数：3 Pages

MA-COM

Radar Pulsed Power Transistor 130W, 2.7-2.9 GHz, 100關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：107.66 Kbytes 页数：3 Pages

MA-COM

Radar Pulsed Power Transistor, 130W, 100us Pulse, 10 Duty 2.7 - 2.9 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • New Power Dense Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic MetaUCeramic Pa

文件：93.73 Kbytes 页数：1 Pages

MACOM

Radar Pulsed Power Transistor-150 Watts 2.7-2.9 GHz, 100ms Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：79.5 Kbytes 页数：2 Pages

MACOM