Radar Pulsed Power Transistor 5W, 2.7-3.1 GHz, 100關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：107.98 Kbytes 页数：3 Pages

MA-COM

Radar Pulsed Power Transistor, 5W, IOOps Pulse, 10 Duty

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic ~tal/Ceramic Pa

文件：154.72 Kbytes 页数：2 Pages

MACOM

Radar Pulsed Power Transistor 75W, 2.7-3.1 GHz, 300關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：105.4 Kbytes 页数：3 Pages

MA-COM

Radar Pulsed Power Transistor, 75W, 300us Pulse, 10 Duty 2.7 - 3.1 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Effkiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic‘MetaUCeramic Pac

文件：144.15 Kbytes 页数：2 Pages

MACOM

Linear Accelerator Pulsed Power Transistor, 16OW, 12ms Pulse, 10 Duty 2.856 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic-Metal/Ceramic Package

文件：136.76 Kbytes 页数：2 Pages

MACOM

Radar Pulsed Power Transistor 160W, 2.856 GHz, 12關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：106.94 Kbytes 页数：3 Pages

MA-COM

StrataFlash Wireless Memory

The Intel StrataFlash® wireless memory (L18) device is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low voltage, multi-level cell (M

文件：1.69919 Mbytes 页数：106 Pages

INTEL

英特尔

StrataFlash Wireless Memory

The Intel StrataFlash® wireless memory (L18) device is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low voltage, multi-level cell (M

文件：1.69919 Mbytes 页数：106 Pages

INTEL

英特尔

StrataFlash Wireless Memory

The Intel StrataFlash® wireless memory (L18) device is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low voltage, multi-level cell (M

文件：1.69919 Mbytes 页数：106 Pages

INTEL

英特尔

StrataFlash Wireless Memory

The Intel StrataFlash® wireless memory (L18) device is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low voltage, multi-level cell (M

文件：1.69919 Mbytes 页数：106 Pages

INTEL

英特尔