Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：107.78 Kbytes 页数：3 Pages

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Radar Pulsed Power Transistor, 110 Watts, 2.25-2.55 GHz, 100 uS Pulse, 10 Duty

Features ■ NPN Silicon Microwave Power Transistor ■ Common Base Configuration ■ Broadband Class C Operation ■ Diffused Emitter Ballasting Resistors ■ Gold Metalization System ■ Internal Input and Output Impedance Matching ■ Hermetic Metal/Ceramic Package

文件：210.86 Kbytes 页数：2 Pages

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Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100關s Pulse, 10 Duty

文件：107.78 Kbytes 页数：3 Pages

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Radar Pulsed Power Transistor

文件：107.78 Kbytes 页数：3 Pages

MA-COM

Bipolar

·NPN Silicon Microwave Power Transistors\n·RoHS Compliant\n·Gold Metallization System\n·Diffused Emitter Ballasting Resistors\n·High Efficiency Inter-Digitized Geometry\n·Broadband Class C Operation\n·Common Base Configuration\n·Hermetic Metal/Ceramic Package\n·Internal Input and Output Impedance Ma;

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