Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：111.35 Kbytes 页数：3 Pages

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Radar Pulsed Power Transistor, 65W, loops Pulse, 10 Duty 2.7 - 2.9 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic P

文件：158 Kbytes 页数：2 Pages

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Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100關s Pulse, 10 Duty

文件：111.35 Kbytes 页数：3 Pages

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Radar Pulsed Power Transistor

文件：657.66 Kbytes 页数：4 Pages

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Bipolar

·NPN Silicon Microwave Power Transistors\n·RoHS Compliant\n·Hermetic Metal/Ceramic Package\n·Internal Input and Output Impedance Matching\n·Gold Metallization System\n·High Efficiency Inter-Digitized Geometry\n·Broadband Class C Operation\n·Common Base Configuration;

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