Radar Pulsed Power Transistor 8.5W, 2.7-2.9 GHz, 100關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：108.1 Kbytes 页数：3 Pages

MA-COM

Radar Pulsed Power Transistor, 8.5W, 100us Pulse, 10 Duty 2.7 - 2.9 GHz

Features • NPM Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic MtxaKeramic Pac

文件：158.93 Kbytes 页数：2 Pages

MACOM

Bipolar

·NPN Silicon Microwave Power Transistors\n·RoHS Compliant\n·Hermetic Metal/Ceramic Package\n·Internal Input and Output Impedance Matching\n·Gold Metallization System\n·Diffused Emitter Ballasting Resistors\n·High Efficiency Inter-Digitized Geometry\n·Broadband Class C Operation\n·Common Base Configu;

MACOM

DIP-32

SST

Silicon Storage Technology, Inc

上传：飞利飞科技有限公司

模块

LAMBDA

电盛兰达

上传：深圳市恒达亿科技有限公司