PDTB113E

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ;

PDTB113EK

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PDTB113EQA

50 V, 500 mA NPN resistor-equipped transistors

Featuresandbenefits 500mAoutputcurrentcapability Built-inbiasresistors 10resistorratiotolerance Simplifiescircuitdesign Reducescomponentcount Reducedpickandplacecosts Lowpackageheightof0.37mm SuitableforAutomaticOptical Inspection(AOI)ofsold

PDTB113EQA

丝印：000001；Package：DFN1010D-3；50 V, 500 mA PNP resistor-equipped transistors

Featuresandbenefits 500mAoutputcurrentcapability Built-inbiasresistors 10resistorratiotolerance Simplifiescircuitdesign Reducescomponentcount Reducedpickandplacecosts Lowpackageheightof0.37mm SuitableforAutomaticOptical Inspection(AOI)ofsold

PDTB113EQA

丝印：000001；Package：SOT1215；50 V, 500 mA PNP resistor-equipped transistors

1.1Generaldescription PNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3 (SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderable sidepads. 1.2Featuresandbenefits 1.3Applications Table1.Productoverview TypenumberR1R2Pac

PDTB113EQA_SER

50 V, 500 mA PNP resistor-equipped transistors

Featuresandbenefits 500mAoutputcurrentcapability Built-inbiasresistors 10resistorratiotolerance Simplifiescircuitdesign Reducescomponentcount Reducedpickandplacecosts Lowpackageheightof0.37mm SuitableforAutomaticOptical Inspection(AOI)ofsold

PDTB113ES

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PDTB113ET

丝印：7U；Package：SOT23；PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ

Featuresandbenefits *500mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance *AEC-Q101qualified

PDTB113ET

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PDTB113ET

PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 1 kOhm; • 500 mA output current capability\n• Reduces pick and place costs\n• Built-in bias resistors\n• ±10 % resistor ratio tolerance\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Reduces component count\n;

500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PDTD113ET.\n