丝印：ZG；Package：SC-70；500 mA, 50 V PNP resistor-equipped transistors

Features 500 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count  10 resistor ratio tolerance AEC-Q101 qualified High temperature applications up to 175 °C

文件：3.64448 Mbytes 页数：27 Pages

NEXPERIA

安世

丝印：ZG；Package：SOT323；500 mA, 50 V PNP resistor-equipped transistors

General description PNP Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features ■ 500 mA output current capability ■ ± 10 resistor ratio tolerance ■ Built-in bias resistors ■ AEC-Q101 qualified ■ Simplifies circuit d

文件：3.64552 Mbytes 页数：27 Pages

NEXPERIA

安世

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 1 k廓

文件：138.34 Kbytes 页数：10 Pages

恩XP

丝印：000001；Package：DFN1010D-3；50 V, 500 mA PNP resistor-equipped transistors

文件：3.67682 Mbytes 页数：23 Pages

NEXPERIA

安世

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 1 k廓

文件：138.34 Kbytes 页数：10 Pages

恩XP

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 1 k廓

文件：138.34 Kbytes 页数：10 Pages

恩XP

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

恩XP

PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 1 kOhm

500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PDTD113ET. • 500 mA output current capability\n• Reduces pick and place costs\n• Built-in bias resistors\n• ±10 % resistor ratio tolerance\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Reduces component count;

Nexperia

安世