RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent

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STMICROELECTRONICS

意法半导体

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：944.64 Kbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

Package：PowerSO-10RF 裸露底部焊盘（2 条成形引线）；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：TRANSISTOR RF POWERSO-10

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意法半导体

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

文件：47.73 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

文件：47.73 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体