| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PD57060 | RF POWER TRANSISTORS The LdmoST Plastic FAMILY DESCRIPTION The PD57060S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57060S boasts the excellent 文件：305.82 Kbytes 页数：12 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
PD57060 | RF POWER TRANSISTORS The LdmoST Plastic FAMILY | ST 意法半导体 | ST | |
RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, 文件：488.78 Kbytes 页数：21 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, 文件：520.53 Kbytes 页数：21 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
RF POWER TRANSISTORS The LdmoST Plastic FAMILY DESCRIPTION The PD57060S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57060S boasts the excellent 文件：305.82 Kbytes 页数：12 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
HF to 2000 MHz Class AB Common Source - PowerSO-10RF HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to 文件：288.66 Kbytes 页数：5 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, 文件：520.53 Kbytes 页数：21 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, 文件：488.78 Kbytes 页数：21 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, 文件：520.53 Kbytes 页数：21 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, 文件：488.78 Kbytes 页数：21 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS |
技术参数
- Package：
PowerSO-10RF (formed lead)
- Marketing Status：
Active
- Grade：
Industrial
- Frequency_nom(MHz)：
945
- Output Power_nom(W)：
60
- Power Gain_nom(dB)：
14.3
- Transistor Supply Voltage_nom(V)：
28
- Efficiency_nom(%)：
54
- R_th(J-C)_max：
1
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
TO-59 |
360 |
价格优势 |
询价 | ||
ST/意法 |
23+ |
94800 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
ST |
24+ |
PowerSO-10 |
615 |
询价 | |||
ST |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
询价 | ||
ST |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 | ||
ST |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
ST/意法 |
21+ |
PWRSO10 |
8000 |
优势供应 实单必成 可开增值税13点 |
询价 | ||
STM |
25+ |
SOP-10 |
96 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
MPU |
24+ |
SMD |
6000 |
原装正品价格优势!欢迎询价QQ:385913858TEL:15 |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 |
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