RF POWER TRANSISTORS The LdmoST Plastic FAMILY

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RF POWER TRANSISTORS The LdmoST Plastic FAMILY

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RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga

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HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

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RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga

文件：483.45 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga

文件：483.45 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga

文件：483.45 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：296.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

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70W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity a • Excellent thermal stability\n• Common source configuration• POUT = 70 W with 14.7dB gain @945 MHz/28 V\n• New RF plastic package;

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FET RF 65V 945MHZ PWRSO-10

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