PD57070S-E分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

PD57070S-E属于分立半导体产品的晶体管-FETMOSFET-射频。由意法半导体集团制造生产的PD57070S-E晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

描述 Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF.

特性 Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 70 W with 14.7dB gain @945 MHz/28 V

■ New RF plastic package