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PD57006S

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

文件:277.66 Kbytes 页数:14 Pages

STMICROELECTRONICS

意法半导体

PD57006S-E

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57006 boasts the excellent ga

文件:398.01 Kbytes 页数:22 Pages

STMICROELECTRONICS

意法半导体

PD57006STR-E

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57006 boasts the excellent ga

文件:398.01 Kbytes 页数:22 Pages

STMICROELECTRONICS

意法半导体

PD57006TR-E

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57006 boasts the excellent ga

文件:398.01 Kbytes 页数:22 Pages

STMICROELECTRONICS

意法半导体

PD57018

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

文件:288.66 Kbytes 页数:5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

PD57018

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

文件:47.73 Kbytes 页数:4 Pages

STMICROELECTRONICS

意法半导体

PD57018-E

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent

文件:560.6 Kbytes 页数:28 Pages

STMICROELECTRONICS

意法半导体

PD57018S

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

文件:47.73 Kbytes 页数:4 Pages

STMICROELECTRONICS

意法半导体

PD57018S-E

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent

文件:560.6 Kbytes 页数:28 Pages

STMICROELECTRONICS

意法半导体

PD57018STR-E

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent

文件:560.6 Kbytes 页数:28 Pages

STMICROELECTRONICS

意法半导体

技术参数

  • Package:

    PowerSO-10RF (formed lead)

  • Marketing Status:

    NRND

  • Grade:

    Industrial

  • Frequency_nom(MHz):

    945

  • Output Power_nom(W):

    6

  • Power Gain_nom(dB):

    15

  • Transistor Supply Voltage_nom(V):

    28

  • Efficiency_nom(%):

    55

  • R_th(J-C)_max:

    5

供应商型号品牌批号封装库存备注价格
ST
10+
5000
原装现货价格有优势量多可发货
询价
PIONEER
25+
TSSOP
18000
原厂直接发货进口原装
询价
SGS
24+
107
询价
PIONEER
23+
DIP
5000
原装正品,假一罚十
询价
ST
24+
TO-270
5000
全现原装公司现货
询价
ST
1645+
?
7500
只做原装进口,假一罚十
询价
STMicroelectronics
24+
NA
3000
进口原装正品优势供应
询价
ANY
30
全新原装 货期两周
询价
STMICROEL
24+
SMD
5500
长期供应原装现货实单可谈
询价
ST
23+
原厂封装
13528
振宏微原装正品,假一罚百
询价
更多PD57供应商 更新时间2025-12-24 11:22:00