PD57资料datasheet下载库存现货第3页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
PD57018TR-E	文件：560.6 Kbytes Page：28 Pages	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent 文件：560.6 Kbytes 页数：28 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57030-E	文件：388.45 Kbytes Page：18 Pages	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga 文件：388.45 Kbytes 页数：18 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57030S	文件：288.66 Kbytes Page：5 Pages	HF to 2000 MHz Class AB Common Source - PowerSO-10RF HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to 文件：288.66 Kbytes 页数：5 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
PD57030S-E	文件：388.45 Kbytes Page：18 Pages	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga 文件：388.45 Kbytes 页数：18 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57030STR-E	文件：388.45 Kbytes Page：18 Pages	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga 文件：388.45 Kbytes 页数：18 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57030TR-E	文件：388.45 Kbytes Page：18 Pages	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga 文件：388.45 Kbytes 页数：18 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57045-E	文件：490.84 Kbytes Page：20 Pages	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent 文件：490.84 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57045S	文件：288.66 Kbytes Page：5 Pages	HF to 2000 MHz Class AB Common Source - PowerSO-10RF HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to 文件：288.66 Kbytes 页数：5 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
PD57045S-E	文件：490.84 Kbytes Page：20 Pages	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent 文件：490.84 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57045STR-E	文件：490.84 Kbytes Page：20 Pages	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent 文件：490.84 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

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技术参数

Package：
PowerSO-10RF (formed lead)
Marketing Status：
NRND
Grade：
Industrial
Frequency_nom(MHz)：
945
Output Power_nom(W)：
6
Power Gain_nom(dB)：
15
Transistor Supply Voltage_nom(V)：
28
Efficiency_nom(%)：
55
R_th(J-C)_max：
5

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市益百分电子有限公司	PD57006-E	ST	10+		5000	原装现货价格有优势量多可发货	询价
谛辉(北京/上海/青岛 )电子科技有限公司	PD5754A	PIONEER	25+	TSSOP	18000	原厂直接发货进口原装	询价
深圳市一线半导体有限公司	PD57018S	SGS	24+		107		询价
齐创科技(上海,北京,青岛)有限公司	PD5754A	PIONEER	23+	DIP	5000	原装正品,假一罚十	询价
深圳市鹏和科技有限公司	PD57006	ST	24+	TO-270	5000	全现原装公司现货	询价
深圳市海天鸿电子科技有限公司	PD57006-E	ST	1645+	?	7500	只做原装进口,假一罚十	询价
深圳市达恩科技有限公司	PD57006-E	STMicroelectronics	24+	NA	3000	进口原装正品优势供应	询价
上海金庆电子技术有限公司	PD5700RPR6	ANY	新		30	全新原装货期两周	询价
千层芯半导体(深圳)有限公司	PD57006-E	STMICROEL	24+	SMD	5500	长期供应原装现货实单可谈	询价
深圳市振宏微科技有限公司	PD57002S-E	ST	23+	原厂封装	13528	振宏微原装正品,假一罚百	询价

更多PD57供应商更新时间2025-12-24 11:22:00

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