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AMR412N

N-Channel100-V(D-S)MOSFET

AnalogPower

Analog Power

AND412HG

UltraBrightLEDLamps

PURDYPurdy Electronics Corporation

审慎电子

ANNA-B412

Stand-aloneBluetooth5.1lowenergymodule

U-BLOXu-blox AG

AGu-blox AG

ANY412-SSNR

AVR짰MicrocontrollerwithCoreIndependentPeripheralsandpicoPower짰technology

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

AOB412L

100VN-ChannelMOSFET

GeneralDescription TheAOT412&AOB412LarefabricatedwithSDMOSTMtrenchtechnologythatcombinesexcellentRDS(ON)withlowgatecharge&lowQrr.Theresultisoutstandingefficiencywithcontrolledswitchingbehavior.ThisuniversaltechnologyiswellsuitedforPWM,loadswitchinga

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB412L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOD412

N-Channel30-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOD412

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD412usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasahighsideswitchinCPUcorepowerconversion.StandardProductAOD412isPb-free(meetsROHS&Sony259specificatio

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOD412

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=85A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.0mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOD412L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD412usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasahighsideswitchinCPUcorepowerconversion.StandardProductAOD412isPb-free(meetsROHS&Sony259specificatio

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT412

N-ChannelSDMOSTMPowerTransistor

GeneralDescription TheAOT412andAOT412LisfabricatedwithSDMOSTMtrenchtechnologythatcombinesexcellentRDS(ON)withlowgatecharge.Theresultisoutstandingefficiencywithcontrolledswitchingbehavior.ThisuniversaltechnologyiswellsuitedforPWM,loadswitchingandgeneralpurpos

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT412

iscN-ChannelMOSFETTransistor

•DESCRITION •Besuitableforsynchronousrectificationforserverand generalpurposeapplications •FEATURES •DrainCurrent–ID=60A@TC=25℃ •DrainSourceVoltage- :VDSS=100V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=15.8mΩ(Max) •100avalanchetested •Minimu

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT412L

N-ChannelSDMOSTMPowerTransistor

GeneralDescription TheAOT412andAOT412LisfabricatedwithSDMOSTMtrenchtechnologythatcombinesexcellentRDS(ON)withlowgatecharge.Theresultisoutstandingefficiencywithcontrolledswitchingbehavior.ThisuniversaltechnologyiswellsuitedforPWM,loadswitchingandgeneralpurpos

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOU412

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU412usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasahighsideswitchinCPUcorepowerconversion.StandardProductAOU412isPb-free(meetsROHS&Sony259specificatio

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOU412

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=85A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOU412L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU412usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasahighsideswitchinCPUcorepowerconversion.StandardProductAOU412isPb-free(meetsROHS&Sony259specificatio

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOWF412

100VN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AQY412EH

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Corporation

松下松下电器

AQY412EHA

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Corporation

松下松下电器

AQY412EHAX

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Corporation

松下松下电器

详细参数

  • 型号:

    PD412

  • 制造商:

    SHARP

  • 制造商全称:

    Sharp Electrionic Components

  • 功能描述:

    Compact Package Type Photodiode with Condensing Lens

供应商型号品牌批号封装库存备注价格
SHARP
14+
300000
蓝敏管/硅光二极管\硅光电池/
询价
PowerexInc
2022
POW-R-BLOK?模块
58
原厂原装正品,价格超越代理
询价
PRX
23+
1100A240
450
全新原装正品,量大可订货!可开17%增值票!价格优势!
询价
PRX
23+
模块
360
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
PRX
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
询价
PRX
17+
MODULE
2100
公司大量全新现货 随时可以发货
询价
POWEREX
1809+
模块
7
就找我吧!--邀您体验愉快问购元件!
询价
Powerex Inc.
22+
POWRBLOK? Module
9000
原厂渠道,现货配单
询价
POWEREX
1100A2000V
94500
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
原厂
2023+
模块
600
专营模块,继电器,公司原装现货
询价
更多PD412供应商 更新时间2024-5-21 10:08:00