DIODE

文件：158.32 Kbytes 页数：2 Pages

NI

恩艾

DIODE

文件：158.32 Kbytes 页数：2 Pages

NI

恩艾

Diode

文件：847.67 Kbytes 页数：5 Pages

KSS

京瓷

200A Avg 1600 Volts

文件：126.63 Kbytes 页数：2 Pages

NIEC

DIODE

文件：126.63 Kbytes 页数：2 Pages

NI

恩艾

Diode

文件：611.99 Kbytes 页数：5 Pages

KSS

京瓷

200A Avg 800 Volts

文件：83.83 Kbytes 页数：1 Pages

NIEC

DIODE

文件：83.83 Kbytes 页数：1 Pages

NI

恩艾

15W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package

The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excellent gain, linea • Excellent thermal stability\n• Common source configuration\n• POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V• Plastic package\n• ESD protection\n• In compliance with the 2002/95/EC european directive;

ST

意法半导体

射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF power tran LdmoST N-chann

ST

意法半导体