PBSS5540X

40 V, 5 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNPlowVCEsattransistorinamediumpowerSOT89(SC-62)package. NPNcomplement:PBSS4540X. FEATURES •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Highefficiencyleadingtolessheatgeneration. APPLICATIONS •Supplyline

PHI

PBSS5540X

40 V, 5 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNPlowVCEsattransistorinamediumpowerSOT89(SC-62)package. NPNcomplement:PBSS4540X. FEATURES •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Highefficiencyleadingtolessheatgeneration. APPLICATIONS •Supplyline

ETC

PBSS5540X

丝印：1G；Package：SOT89；40 V, 5 A PNP low VCEsat (BISS) transistor

1.Generaldescription PNPlowVCEsattransistorinamediumpowerSOT89(SC-62)package. NPNcomplement:PBSS4540X. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Highefficiencyleadingtolessheatgeneration.

PBSS5540X-Q

40 V, 5 A PNP low VCEsat transistor;

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PBSS5540Z

PNP medium power transistor

DESCRIPTION PNPlowVCEsattransistorinaSOT223plasticpackage. NPNcomplement:PBSS4540Z. FEATURES •Highcurrent(max.10A) •Lowvoltage(max.40V) •LowVCEsat. APPLICATIONS •Heavydutybatterypoweredequipment(Automotive, TelecomandAudio/Video)suchasmotorandlamp

PHI

PBSS5540Z

40 V low VCEsat PNP transistor

DESCRIPTION PNPlowVCEsattransistorinaSOT223plasticpackage. NPNcomplement:PBSS4540Z. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedheat generation. APPLICATIONS •Supplylineswitchingcircuits •Bat

ETC

PBSS5540Z

丝印：PB5540；Package：SC-73；40 V low VCEsat PNP transistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223plasticpackage. NPNcomplement:PBSS4540Z 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedheatgeneration. 3.Applications •Supplyl

PBSS5540Z

40 V low VCEsat PNP transistor; • Low collector-emitter saturation voltage\n• High current capability\n• Improved device reliability due to reduced heat generation.\n• AEC-Q101 qualified\n;

PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z.\n

PBSS5540Z-Q

丝印：PB5540；Package：SC-73；40 V low VCEsat PNP transistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223plasticpackage. NPNcomplement:PBSS4540Z-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedheatgeneration •QualifiedaccordingtoAEC

PBSS5540X

功率三极管;