40 V, 5 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a medium power SOT89 (SC-62) package. NPN complement: PBSS4540X. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High efficiency leading to less heat generation. APPLICATIONS • Supply line

文件：100.93 Kbytes 页数：13 Pages

PHI

PHI

40 V, 5 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a medium power SOT89 (SC-62) package. NPN complement: PBSS4540X. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High efficiency leading to less heat generation. APPLICATIONS • Supply line

文件：200.43 Kbytes 页数：13 Pages

恩XP

丝印：1G；Package：SOT89；40 V, 5 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat transistor in a medium power SOT89 (SC-62) package. NPN complement: PBSS4540X. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High efficiency leading to less heat generation.

文件：239.08 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：PB5540；Package：SC-73；40 V low VCEsat PNP transistor

1. General description PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation. 3. Applications • Supply l

文件：238.78 Kbytes 页数：9 Pages

NEXPERIA

安世

40 V low VCEsat PNP transistor

DESCRIPTION PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation. APPLICATIONS • Supply line switching circuits • Bat

文件：150.69 Kbytes 页数：9 Pages

恩XP

PNP medium power transistor

DESCRIPTION PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z. FEATURES • High current (max. 10 A) • Low voltage (max. 40 V) • Low VCEsat. APPLICATIONS • Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp

文件：44.43 Kbytes 页数：8 Pages

PHI

PHI

丝印：PB5540；Package：SC-73；40 V low VCEsat PNP transistor

1. General description PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z-Q 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Qualified according to AEC

文件：222.84 Kbytes 页数：10 Pages

NEXPERIA

安世

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

PHI

PNP low VCEsat (BISS) transistor 40 V, 5 A

文件：200.43 Kbytes 页数：13 Pages

PHI

PHI

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

PHI