PBSS5360PAS数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

PNP low VCEsat Breakthrough in a Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.
NPN complement: PBSS4360PAS

特性 Features

• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain (hFE) at high IC
• High efficiency due to less heat generation
• High temperature applications up to 175 °C
• Reduced Printed-Circuit Board (PCB) area requirements
• Leadless small SMD plastic package with soldarable side pads
• Exposed heat sink for excellent thermal and electrical conductivity
• Suitable for Automatic Optical Inspection (AOI) of solder joint
• AEC-Q101 qualified

应用 Application

• Loadswitch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)