首页 >PBSS5360PAS>规格书列表
型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
PBSS5360PAS | 丝印:EA;Package:DFN2020D-3;60 V, 3A PNP low VCEsat (BISS) transistor 文件:745.32 Kbytes 页数:17 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | |
丝印:EA;Package:DFN2020D-3;60 V, 3A PNP low VCEsat transistor 1. General description PNP low VCEsat transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. NPN complement: PBSS4360PAS-Q 2. Features and benefits • Low 文件:309.17 Kbytes 页数:15 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
丝印:EA;Package:DFN2020D-3;60 V, 3A PNP low VCEsat transistor 1. General description PNP low VCEsat transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. NPN complement: PBSS4360PAS-Q 2. Features and benefits • Low 文件:310.27 Kbytes 页数:15 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
60 V, 3A PNP low VCEsat transistor 1. General description PNP low VCEsat transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. NPN complement: PBSS4360PAS-Q 2. Features and benefits • Low 文件:310.27 Kbytes 页数:15 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
PBSS5360PAS | 60 V, 3A PNP low VCEsat (BISS) transistor PNP low VCEsat Breakthrough in a Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.\n NPN complement: PBSS4360PAS • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• High temperature applications up to 175 °C\n• Reduced Printed-Circuit Board (PCB) area requirements\n• L; | Nexperia 安世 | Nexperia | |
Single bipolar transistors | Nexperia 安世 | Nexperia | ||
Package:3-UDFN 裸露焊盘;包装:卷带(TR) 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS PNP 60V 3A DFN2020D-3 | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Package:3-UDFN 裸露焊盘;包装:卷带(TR) 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS PNP 60V 3A DFN2020D-3 | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
技术参数
- Package name:
DFN2020D-3
- Size (mm):
2 x 2 x 0.65
- Polarity:
PNP
- Ptot (mW):
600
- VCEO [max] (V):
-60
- IC [max] (mA):
-3000
- hFE [min]:
150
- Tj [max] (°C):
175
- fT [min] (MHz):
65
- Automotive qualified:
N
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEXPERIA |
22+ |
原厂 |
32000 |
询价 | |||
NEXPERIA |
22+ |
原厂 |
9600 |
询价 | |||
NEXPERIA/安世 |
18+ |
DFN |
1000 |
进口原装现货假一赔万力挺实单 |
询价 | ||
NEXPERIA/安世 |
2511 |
DFN2020-6 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
Nexperia(安世) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
Nexperia(安世) |
2447 |
SOT-1061D |
105000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
NEXPERIA |
25+ |
DFN-3 |
6675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
NEXPERIA/安世 |
23+ |
NA |
9000 |
原装正品假一罚百!可开增票! |
询价 | ||
恩XP |
22+ |
NA |
45000 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
Nexperia |
2022+ |
原厂原包装 |
8600 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |
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