丝印：EA；Package：DFN2020D-3；60 V, 3A PNP low VCEsat (BISS) transistor

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丝印：EA；Package：DFN2020D-3；60 V, 3A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. NPN complement: PBSS4360PAS-Q 2. Features and benefits • Low

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丝印：EA；Package：DFN2020D-3；60 V, 3A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. NPN complement: PBSS4360PAS-Q 2. Features and benefits • Low

文件：310.27 Kbytes 页数：15 Pages

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60 V, 3A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. NPN complement: PBSS4360PAS-Q 2. Features and benefits • Low

文件：310.27 Kbytes 页数：15 Pages

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60 V, 3A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough in a Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.\n NPN complement: PBSS4360PAS • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• High temperature applications up to 175 °C\n• Reduced Printed-Circuit Board (PCB) area requirements\n• L;

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Single bipolar transistors

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Package：3-UDFN 裸露焊盘；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 3A DFN2020D-3

Nexperia USA Inc.

Package：3-UDFN 裸露焊盘；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 3A DFN2020D-3

Nexperia USA Inc.